Publication

2024

“Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators”

K. Jeon, J.J. Ryu, S. Im, H.K. Seo, T. Eom, H. Ju, M.K. Yang, D.S. Jeong, G.H. Kim*,

Nature Communications, Editor's pick, Featured article 

https://doi.org/10.1038/s41467-023-44620-1

2023

"Ag-dispersive chalcogenide media for readily activated electronic memristor"

S.Y. Lee, J.J. Ryu, H.K. Seo, H. Sohn, G.H. Kim*, M.K. Yang

Applied Surface Science 

https://doi.org/10.1016/j.apsusc.2023.158747 

"Optimized chalcogenide medium for inherently activated resistive switching device"

J.J. Ryu, K. Jeon, T. Eom, M.K. Yang, H. Sohn, G.H. Kim*

Applied Surface Science 

https://doi.org/10.1016/j.apsusc.2023.158444 

"Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 Film"

D. Lee, G.H. Park, S.H. Kim, K.Yang, J. Lee, H. Choi, Y. Lee, J.J. Ryu, J.I. Lee, G.H. Kim, M.H. Park,

IEEE ELECTRON DEVICE LETTERS 

10.1109/LED.2023.3294522 

"Wake-up-mitigated giant ferroelectricity in Hf0.5Zr0.5O2 thin films through oxygen-providing, surface-oxidized W electrode"

K. Yang, G.Y. Kim, J.J. Ryu, D. Lee, J.Y. Park, S.H. Kim, G.H. Park, G.T. Yu, G.H. Kim*, S.Y. Choi, M.H. Park,

Materials Science in Semiconductor Processing 

https://doi.org/10.1016/j.mssp.2023.107565 

"Analogue Artificial Synaptic Performance of Self-rectifying Resistive Switching Device"

H.K. Seo, J.J Ryu, S.Y. Lee, K. Jeon, H. Sohn, G.H. Kim*, M.K. Yang, 

Advanced Electronic Materials 

https://doi.org/10.1002/aelm.202300165 

2022

“Threshold switching in chalcogenide GeTe and GeTeS thin films prepared via plasma enhanced atomic layer deposition”

J.J Ryu, K. Jeon, H. Sohn, G.H. Kim*,

Journal of Materials Chemistry C

10.1039/D2TC03656H 

“Dot-product operation in crossbar array using a self-rectifying resistive device”

K. Jeon, J.J Ryu, D.S. Jeong, G.H. Kim*, 

Advanced Materials Interfaces 

https://doi.org/10.1002/admi.202200392 

“Material and structural engineering of ovonic threshold switch for highly reliable performance”

H.K. Seo, J.J Ryu, S.Y. Lee, M. Park, S.G. Park, W. Song, G.H. Kim*, M.K. Yang,

Advanced Electronic Materials

https://doi.org/10.1002/aelm.202200161 

“Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates”

K. Yang, E.B. Lee, D. Lee, J.Y. Park, S.H. Kim, G.H. Park, G.T. Yu, J.I. Lee, G.H. Kim*, M.H. Park, 

Composites Part B 

https://doi.org/10.1016/j.compositesb.2022.109824 

2021

“Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device”

D. Lee, A.S. Sokolov, B. Ku, Y.R. Jeon, D.H. Kim, H.T. Kim, G.H. Kim, C.H. Choi, 

Applied Surface Science

https://doi.org/10.1016/j.apsusc.2021.149140 

“Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity”

J.M. Hwang, S.M. Han, H. Yang, S. Yeo, S.H. Lee, C.W. Park, G.H. Kim, B.K. Park, Y. Byun, T. Eom, T.M. Chung,

Journal of Materials Chemistry C

10.1039/D0TC05682K 

“Self-rectifying resistive memory in passive crossbar arrays”

K. Jeon, J. Kim, J.J. Ryu, S. Yoo, C. Song, M.K. Yang, D.S. Jeong, G.H. Kim*,

Nature Communications

https://doi.org/10.1038/s41467-021-23180-2 

“Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films”

D.H. Lee, G.T. Yu, J.Y. Park, S.H. Kim, K. Yang, G.H. Park, J.J. Ryu, J.I. Lee, G.H. Kim*, M.H. Park,

Acta Materialia

https://doi.org/10.1016/j.actamat.2021.117405

“Strategic allocation of two-dimensional van der Waals semiconductor as an oxygen reservoir for boosting resistive switching reliability” 

S. Yoo, R.E. Agbenyeke, H. Choi, K. Jeon, J.J. Ryu, T. Eom, B.K. Park, T.M. Chung, D.S. Jeong, W. Song, G.H. Kim*

Applied Surface Science

https://doi.org/10.1016/j.apsusc.2021.151936 

2020

“Ti-doped alumina based reliable resistive switching in sub-μA regime”

D.K. Lee, G.H. Kim, H. Sohn, M.K. Yang

Applied Physics Letters

https://doi.org/10.1063/5.0011310

“Highly Linear and Symmetric Weight Modification in HfO2‐Based Memristive Devices for High‐Precision Weight Entries”

J.J. Ryu, K. Jeon, G. Kim, M.K. Yang, C. Kim, D.S. Jeong, G.H. Kim*
  Advanced Electronic Materials
  https://doi.org/10.1002/aelm.202000434

“IR-QNN framework: An IR drop-aware offline training of quantized crossbar arrays”

M.E. Fouda, S. Lee, J. Lee, G.H. Kim, F. Kurdahi, A.M. Eltawi
  IEEE Access
  https://doi.org/10.1109/ACCESS.2020.3044652

2019

“Fully “Erase-free” Multi-Bit Operation in HfO2-Based Resistive Switching Device”

J.J. Ryu, K. Jeon, S. Yeo, G. Lee, C. Kim, G.H. Kim*

ACS Applied Materials & Interfaces
  https://doi.org/10.1021/acsami.8b20035

“Role of an Interfacial Layer in Ta2O5-Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation”

D.K. Lee, G.H. Kim, H. Sohn, M.K. Yang

Physica Status SolidiRapid Research Letters

https://doi.org/10.1002/pssr.201900646

“Positive effects of a Schottky-type diode on unidirectional resistive switching devices”

D.K. Lee, G.H. Kim, H. Sohn, M.K. Yang

Applied Physics Letters

https://doi.org/10.1063/1.5133868

“Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir”

N. Mullani, I. Ali, T.D. Dongale, G.H. Kim, B.J. Choi, M.A. Basit, T.J. Park

Materials Science in Semiconductor Processing

https://doi.org/10.1016/j.mssp.2019.104907

2018

“Band gap engineering of atomic layer deposited ZnxSn1-xO buffer for efficient Cu(In,Ga)Se2 solar cell”

R.E. Agbenyeke, S. Song, B.K. Park, G.H. Kim, J.H. Yun, T.M. Chung, C.G. Kim, J.H. Han

Progress in Photovoltaics: Research and Applications

https://doi.org/10.1002/pip.3012

“Post‐Annealing Effect on Resistive Switching Performance of a Ta/Mn2O3/Pt/Ti Stacked Device”

M.K. Yang, G.H. Kim*
  Physica Status SolidiRapid Research Letters
  https://doi.org/10.1002/pssr.201800031

“Optimized Method for Low‐Energy and Highly Reliable Multibit Operation in a HfO2‐Based Resistive Switching Device”

J.J. Ryu, B.K. Park, T.K. Chung, Y.K. Lee, G.H. Kim*

Advanced Electronic Materials

https://doi.org/10.1002/aelm.201800261

“Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis (N-ethoxy-2, 2-dimethyl propanamido) tin precursor”

H.Y. Kim, J.H. Nam, S.M. George, J.S. Park, B.K. Park, G.H. Kim, D.J. Jeon, T.M. Chung, J.H. Han
  Ceramics International
  https://doi.org/10.1016/j.ceramint.2018.09.263

2017

"Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device"

G.H. Kim, H. Ju, M.K. Yang, D.K. Lee, J.W. Choi, J.H. Jang, S. Lee, I.S. Cha, B.K. Park, J.H. Han, T.M. Chung, K.M. Kim, C.S. Hwang, Y.K. Lee,

Small

https://doi.org/10.1002/smll.201701781

"Basic ammonothermal growth of bulk GaN single crystal using sodium mineralizers"

J.B. Shim, G.H. Kim, Y.K. Lee,

Journal of Crystal Growth

https://doi.org/10.1016/j.jcrysgro.2017.08.027  

"Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109"

K.J. Yoon, G.H. Kim, S. Yoo, W. Bae, J.H. Yoon, T.H. Park, D.E. Kwon, Y.J. Kwon, H.J. Kim, Y.M. Kim, C.S.Hwang,

Advanced Electronic Materials

https://doi.org/10.1002/aelm.201700152

"Improvement of thermoelectric properties of Bi2Te3 and Sb2Te3 films grown on graphene substrate"

C.W. Lee, G.H. Kim, J.W. Choi, K.S. An, J. Kim, H. Kim, Y.K. Lee,

Physica Status SolidiRapid Research Letters

https://doi.org/10.1002/pssr.201700029

"Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition"

C.W. Lee, G.H. Kim, S.G. Kang, M.A. Kang, K.S. An, H. Kim, Y.K. Lee,

Physica Status SolidiRapid Research Letters

https://doi.org/10.1002/pssr.201600369 

2015

"Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film"

M.K. Yang, H. Ju, G.H. Kim, J.K. Lee, H.C. Ryu,

Scientific Reports

https://doi.org/10.1038/srep14053

"The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film"

M.K. Yang, G.H. Kim, H. Ju, J.K. Lee, H.C. Ryu,

Applied Physics Letters

https://doi.org/10.1063/1.4928249

"An analysis of “non-lattice” oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film"

M.K. Yang, G.H. Kim, H. Ju, J.K. Lee, H.C. Ryu,

Applied Physics Letters            

https://doi.org/10.1063/1.4907704 

2014

"A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View"

J.Y. Seok, S.J. Song, J.H. Yoon, K.J. Yoon, T.H. Park, D.E. Kwon, H. Lim, G.H. Kim, D.S. Jeong, C.S. Hwang,

Advanced Functional Materials

https://doi.org/10.1002/adfm.201303520 

2013

"Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM"

S.J. Song, J.Y. Seok, J.H. Yoon, K.M. Kim, G.H. Kim, M.H. Lee, C.S. Hwang,

Scientific Reports          

https://doi.org/10.1038/srep03443

"Electrode Engineering for Improving Resistance Switching of Sb2O5 Films"

Y. Ahn, Y.J. Choi, J.W. Park, J.H. Lee, G.H. Kim, Y.S. Kim, J. Heo, H.J. Kim, C.S. Hwang,

Applied Physics Express

https://doi.org/10.7567/APEX.6.091102

"Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt"

K.J. Yoon, S.J. Song, J.Y. Seok, J.H. Yoon, G.H. Kim, J.H. Lee, C.S. Hwang, Nanotechnology

https://doi.org/10.1088/0957-4484/24/14/145201

"Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots"

J.H. Yoon, J.H. Han, J.S. Jung, W. Jeon, G.H. Kim, S.J. Song, J.Y. Seok, K.J. Yoon, M.H. Lee, C.S. Hwang,

Advanced Materials

https://doi.org/10.1002/adma.201204572 

2012

"Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide Sb2O5 films"

Y. Ahn, J.H. Lee, G.H. Kim, J.W. Park, J. Heo, S.W. Ryu, Y.S Kim, C.S. Hwang, H.J. Kim,

Journal of Applied Physics

https://doi.org/10.1063/1.4767918

"Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application"

S.J. Song, S.W. Lee, G.H. Kim, J.Y. Seok, K.J. Yoon, J.H. Yoon, C.S. Hwang, J. G, C.H. Ko,

Chemistry of Materials

https://doi.org/10.1021/cm302182s

"Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5"

Y. Ahn, S.W. Ryu, J.H. Lee, J.W. Park, G.H. Kim, Y.S. Kim, J. Heo, C.S. Hwang, H.J. Kim,

Journal of Applied Physics                   

https://doi.org/10.1063/1.4766415

"32x32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memomry"

G.H. Kim, J.H. Lee, Y. Ahn, W. Jeon, S.J. Song, J.Y. Seok, J.H. Yoon, K.J. Yoon, T.J. Park, C.S. Hwang

Advanced Functional Materials

https://doi.org/10.1002/adfm.201202170

"Optimization of Chemical Structure of Schottky-Type Selection Diode for Crossbar Resistive Memory"

G.H. Kim, J.H. Lee, W. Jeon, S.J. Song, J.Y. Seok, J.H. Yoon, K.J Yoon, T.J Park, C.S. Hwang,

ACS Applied Materials & Interfaces

https://doi.org/10.1021/am301293v

"Schottky diode with excellent performance for large integration density of crossbar resistive memory"

G.H. Kim, J.H. Lee, J.H. Han, S.J. Song, J.Y. Seok, J.H. Yoon, K.J. Yoon, M.H. Lee, T.J. Park, C.S. Hwang,

Applied Physics Letters

https://doi.org/10.1063/1.4722784

"Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell"

K.J. Yoon, M.H. Lee, G.H. Kim, S.J. Song, J.Y. Seok, S. Han, J.H. Yoon, K.M. Kim, C.S. Hwang,

Nanotechnology

https://doi.org/10.1088/0957-4484/23/18/185202

"Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory"

J.H. Lee, G.H. Kim, Y.B Ahn, J.W. Park, S.W Ryu, C.S Hwang, H.J Kim,
  Applied Physics Letters

https://doi.org/10.1063/1.3696077

"Resistive Switching in TiO2 Thin Films Using the Semiconducting In-Ga-Zn-O Electrode"

J.Y. Seok, G.H. Kim, J.H. Kim U.K. Kim, Y.- J. Chung, S.J. Song, J.H. Yoon, K.J Yoon, M.H. Lee, K.M. Kim, C.S. Hwang,

IEEE Electron Device Letters

https://doi.org/10.1109/LED.2011.2182175

2011

“Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy”

M.H. Lee, K.M. Kim, S.J. Song, S.H. Rha, J.Y. Seok, J.S. Jung, G.H. Kim, J.H. Yoon, C.S. Hwang

Applied Physics AMATERIALS SCIENCE & PROCESSING

https://doi.org/10.1007/s00339-011-6266-7

“Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory”

K.M. Kim, S.J. Song, G.H. Kim, J.Y. Seok, M.H. Lee, J.H. Yoon, J. Park, C.S. Hwang

Advanced Functional Materials

https://doi.org/10.1002/adfm.201002282

“Local Epitaxial Growth of Ru Thin Films by Atomic Layer Deposition at Low Temperature”

S.K. Kim, S. Han, G.H. Kim, J.H. Jang, J.H. Han, C.S, Hwang

Journal of The Electrochemical Society

https://doi.org/10.1149/1.3596018

“SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory”

S.W. Ryu, H.K. Lyeo, J.H. Lee, Y.B. Ahn, G.H. Kim, C.H. Kim, S.G. Kim, S.H. Lee, K.Y. Kim, J.H. Kim

Nanotechnology

https://doi.org/10.1088/0957-4484/22/25/254005

“A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure”

K.M. Kim, B.J. Choi, M.H. Lee, G.H. Kim, S.J. Song, J.Y. Seok, J.H. Yoon, S. Han, C.S. Hwang

Nanotechnology

https://doi.org/10.1088/0957-4484/22/25/254010

“Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments”

G.H. Kim, J.H. Lee, J.Y. Seok, S.J. Song, J.H. Yoon, K.J. Yoon, M.H. Lee, K.M. Kim, H.D, Lee, S.W. Ryu, T.J. Park

Applied Physics Letters

https://doi.org/10.1063/1.3600784

“Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr,Ti)O3/Pt and paraelectric capacitors”

H.J. Lee, M.H. Park, G.H. Kim, J.Y. Seok, Y.J. Kim, C.S. Hwang, A.Q. Jiang

Journal of Applied Physics

https://doi.org/10.1063/1.3597816

“Tristate Memory Using Ferroelectric–Insulator–Semiconductor Heterojunctions for 50% Increased Data Storage”

M.H. Park, H.J. Lee, G.H. Kim, Y.J. Kim, J.H. Kim, J.H. Lee

Advanced Functional Materials

https://doi.org/10.1002/adfm.201101073

2010

“Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior”

J.H. Yoon, K.M. Kim, M.H. Lee, S.K. Kim, G.H. Kim, S.J. Song, J.Y. Seok, C.S. Hwang,

Applied Physics Letters

https://doi.org/10.1063/1.3525801

“Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model”

K.M. Kim, M.H. Lee, G.H. Kim, S.J. Song, J.Y. Seok, J.H. Yoon, C.S. Hwang,

Applied Physics Letters

https://doi.org/10.1063/1.3505354

“A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory”

G.H. Kim*, K.M. Kim, J.Y. Seok, H.J. Lee, D.Y. Cho, J.H. Han, C.S. Hwang,

Nanotechnology

https://doi.org/10.1088/0957-4484/21/38/385202

“Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory”

G.H. Kim, K.M. Kim, J.Y. Seok, M.H. Lee, S.J. Song, C.S. Hwang,

Journal of The Electrochemical Society

https://doi.org/10.1149/1.3478143

“Scanning probe based observation of bipolar resistive switching NiO films”

M.H. Lee, S.J. Song, K.M. Kim, G.H. Kim, J.Y. Seok, J.H. Yoon, C.S. Hwang,

Applied Physics Letters

https://doi.org/10.1063/1.3479526

“Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures”

K.M. Kim, G.H. Kim, S.J. Song, J.Y. Seok, M.H. Lee, J.H. Yoon, C.S. Hwang,

Nanotechnology

https://doi.org/10.1088/0957-4484/21/30/305203

“Bias polarity dependent local electrical conduction in resistive switching TiO2 thin films”

Y.C. Shin, M.H. Lee, K.M. Kim, G.H. Kim, S.J. Song, J.Y. Seok, C.S. Hwang,

Physica Status SolidiRapid Research Letters

https://doi.org/10.1002/pssr.201004066

“Polarization reversal behavior in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt capacitors for different reversal directions”

H.J. Lee, G.H. Kim, M.H. Park, A.Q. Jiang, C.S. Hwang,

Applied Physics Letters

https://doi.org/10.1063/1.3435484

“A Pt/TiO2/Ti SchottkyType selection diode for alleviating the sneak current in resistance switching memory arrays”

W.Y. Park, G.H. Kim, J.Y. Seok, K.M. Kim, S.J. Song, M.H. Lee, C.S. Hwang,

Nanotechnology

https://doi.org/10.1088/0957-4484/21/19/195201

“Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy”

M.H. Lee, K.M. Kim, G.H. Kim, J.Y. Seok, S.J. Song, J.H. Yoon, C.S. Hwang,

Applied Physics Letters

https://doi.org/10.1063/1.3400222

“Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition”

S.K. Kim, J.H. Han, G.H. Kim, C.S. Hwang,

Chemistry of Materials

https://doi.org/10.1021/cm100057y

“Methods of Set Switching for Improving the Uniformity of Filament Formation in the TiO2 Thin Film”

K.M. Kim, S.J. Song, G.H. Kim, J.Y. Seok, M.H. Lee, J.S. Zhao, C.S. Hwang,

Electrochemical and Solid State Letters

https://doi.org/10.1149/1.3369469 

“Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell”

S.J. Song, K.M. Kim, G.H. Kim, M.H. Lee, J.Y. Seok, R.J. Jung, C.S. Hwang,

Applied Physics Letters

https://doi.org/10.1063/1.3355415

“Atomic structure of conducting nanofilaments in TiO2 resistive switching memory”

D.H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.S. Li, G.S. Park, B.R. Lee, S.W. Han, M.Y. Kim, C.S. Hwang,

Nature Nanotechnology

https://doi.org/10.1038/nnano.2009.456

2009

“An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O3 thin film capacitor using the switching transient current measurements”

G.H. Kim, H.J. Lee, A.Q. Jiang, M.H. Park, C.S. Hwang

Journal of Applied Physics

https://doi.org/10.1063/1.3078104

“The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films”

A.Q. Jiang, H.J. Lee, G.H. Kim, C.S. Hwang,

Advanced Materials

https://doi.org/10.1002/adma.200802924

“The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory”

S.W. Ryu, J.H. Lee, Y.B. Ahn, C.H. Kim, B.S. Yang, G.H. Kim, S.G. Kim, S.H. Lee, C.S. Hwang, H.J. Kim,

Applied Physics Letters

https://doi.org/10.1063/1.3232237

“Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films”

K.M. Kim, B.J. Choi, S.J. Song, G.H. Kim, C.S. Hwang

Journal of The Electrochemical Society

https://doi.org/10.1149/1.3240201

2008

“(In,Sn)2O3/TiO2/Pt Schottky-type diode switch for the TiO2 resistive switching memory array”

Y.C. Shin, J. Song, K.M. Kim, B.J. Choi, S. Choi, H.J. Lee, G.H. Kim, T. Eom, C.S. Hwang

Applied Physics Letters

https://doi.org/10.1063/1.2912531

2007

“Initial Growth Behavior of a Lead Oxide Thin Film on Ir Substrates by Atomic Layer Deposition”

H.J. Lee, G.H. Kim, K. Lee, C.S. Hwang

Electrochemical and Solid State Letters

https://doi.org/10.1149/1.2789286