Emerging Electronic Device
Research Group
YONSEI UNIVERSITY
Publication
2024
“Functional interface layer for a high-performance self-rectifying memristive device using hafnium-zirconia thin film”
S.Y. Jeong, J. Jung, H.K. Seo, J.S. Jeong, J.H. Lee, G.H. Kim, M.K. Yang
Results in Engineering
https://doi.org/10.1016/j.rineng.2024.102906
“Al concentration-dependent electrical modulation of Al-doped ZnO thin f ilm using atomic layer deposition”
J.W. Choi, J.J. Ryu, W. Song, G.H. Kim*, T.M. Chung
Ceramics International
https://doi.org/10.1016/j.ceramint.2024.09.132
“Direct Growth of Bi2SeO5 Thin Films for High-k Dielectrics via Atomic Layer Deposition”
H. Park, J.H. Hwang, S.H. Oh, J.J. Ryu, K. Jeon, M. Kang, H.J. Chai, A. Ham, G.H. Kim, K. Kang*, T. Eom*
ACS Nano
https://doi.org/10.1021/acsnano.4c05273
“Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators”
K. Jeon, J.J. Ryu, S. Im, H.K. Seo, T. Eom, H. Ju, M.K. Yang, D.S. Jeong, G.H. Kim*,
Nature Communications, Editor's pick, Featured article
https://doi.org/10.1038/s41467-023-44620-1
2023
"Ag-dispersive chalcogenide media for readily activated electronic memristor"
S.Y. Lee, J.J. Ryu, H.K. Seo, H. Sohn, G.H. Kim*, M.K. Yang
Applied Surface Science
https://doi.org/10.1016/j.apsusc.2023.158747
"Optimized chalcogenide medium for inherently activated resistive switching device"
J.J. Ryu, K. Jeon, T. Eom, M.K. Yang, H. Sohn, G.H. Kim*
Applied Surface Science
https://doi.org/10.1016/j.apsusc.2023.158444
"Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 Film"
D. Lee, G.H. Park, S.H. Kim, K.Yang, J. Lee, H. Choi, Y. Lee, J.J. Ryu, J.I. Lee, G.H. Kim, M.H. Park,
IEEE ELECTRON DEVICE LETTERS
"Wake-up-mitigated giant ferroelectricity in Hf0.5Zr0.5O2 thin films through oxygen-providing, surface-oxidized W electrode"
K. Yang, G.Y. Kim, J.J. Ryu, D. Lee, J.Y. Park, S.H. Kim, G.H. Park, G.T. Yu, G.H. Kim*, S.Y. Choi, M.H. Park,
Materials Science in Semiconductor Processing
https://doi.org/10.1016/j.mssp.2023.107565
"Analogue Artificial Synaptic Performance of Self-rectifying Resistive Switching Device"
H.K. Seo, J.J Ryu, S.Y. Lee, K. Jeon, H. Sohn, G.H. Kim*, M.K. Yang,
Advanced Electronic Materials
https://doi.org/10.1002/aelm.202300165
2022
“Threshold switching in chalcogenide GeTe and GeTeS thin films prepared via plasma enhanced atomic layer deposition”
J.J Ryu, K. Jeon, H. Sohn, G.H. Kim*,
Journal of Materials Chemistry C
“Dot-product operation in crossbar array using a self-rectifying resistive device”
K. Jeon, J.J Ryu, D.S. Jeong, G.H. Kim*,
Advanced Materials Interfaces
https://doi.org/10.1002/admi.202200392
“Material and structural engineering of ovonic threshold switch for highly reliable performance”
H.K. Seo, J.J Ryu, S.Y. Lee, M. Park, S.G. Park, W. Song, G.H. Kim*, M.K. Yang,
Advanced Electronic Materials
https://doi.org/10.1002/aelm.202200161
“Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates”
K. Yang, E.B. Lee, D. Lee, J.Y. Park, S.H. Kim, G.H. Park, G.T. Yu, J.I. Lee, G.H. Kim*, M.H. Park,
Composites Part B
https://doi.org/10.1016/j.compositesb.2022.109824
2021
“Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device”
D. Lee, A.S. Sokolov, B. Ku, Y.R. Jeon, D.H. Kim, H.T. Kim, G.H. Kim, C.H. Choi,
Applied Surface Science
https://doi.org/10.1016/j.apsusc.2021.149140
“Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity”
J.M. Hwang, S.M. Han, H. Yang, S. Yeo, S.H. Lee, C.W. Park, G.H. Kim, B.K. Park, Y. Byun, T. Eom, T.M. Chung,
Journal of Materials Chemistry C
“Self-rectifying resistive memory in passive crossbar arrays”
K. Jeon, J. Kim, J.J. Ryu, S. Yoo, C. Song, M.K. Yang, D.S. Jeong, G.H. Kim*,
Nature Communications
https://doi.org/10.1038/s41467-021-23180-2
“Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films”
D.H. Lee, G.T. Yu, J.Y. Park, S.H. Kim, K. Yang, G.H. Park, J.J. Ryu, J.I. Lee, G.H. Kim*, M.H. Park,
Acta Materialia
https://doi.org/10.1016/j.actamat.2021.117405
“Strategic allocation of two-dimensional van der Waals semiconductor as an oxygen reservoir for boosting resistive switching reliability”
S. Yoo, R.E. Agbenyeke, H. Choi, K. Jeon, J.J. Ryu, T. Eom, B.K. Park, T.M. Chung, D.S. Jeong, W. Song, G.H. Kim*
Applied Surface Science
https://doi.org/10.1016/j.apsusc.2021.151936
2020
“Ti-doped alumina based reliable resistive switching in sub-μA regime”
D.K. Lee, G.H. Kim, H. Sohn, M.K. Yang
Applied Physics Letters
https://doi.org/10.1063/5.0011310
“Highly Linear and Symmetric Weight Modification in HfO2‐Based Memristive Devices for High‐Precision Weight Entries”
J.J. Ryu, K. Jeon, G. Kim, M.K. Yang, C. Kim, D.S. Jeong, G.H. Kim*
Advanced Electronic Materials
https://doi.org/10.1002/aelm.202000434
“IR-QNN framework: An IR drop-aware offline training of quantized crossbar arrays”
M.E. Fouda, S. Lee, J. Lee, G.H. Kim, F. Kurdahi, A.M. Eltawi
IEEE Access
https://doi.org/10.1109/ACCESS.2020.3044652
2019
“Fully “Erase-free” Multi-Bit Operation in HfO2-Based Resistive Switching Device”
J.J. Ryu, K. Jeon, S. Yeo, G. Lee, C. Kim, G.H. Kim*
ACS Applied Materials & Interfaces
https://doi.org/10.1021/acsami.8b20035
“Role of an Interfacial Layer in Ta2O5-Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation”
D.K. Lee, G.H. Kim, H. Sohn, M.K. Yang
Physica Status SolidiRapid Research Letters
https://doi.org/10.1002/pssr.201900646
“Positive effects of a Schottky-type diode on unidirectional resistive switching devices”
D.K. Lee, G.H. Kim, H. Sohn, M.K. Yang
Applied Physics Letters
https://doi.org/10.1063/1.5133868
“Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir”
N. Mullani, I. Ali, T.D. Dongale, G.H. Kim, B.J. Choi, M.A. Basit, T.J. Park
Materials Science in Semiconductor Processing
https://doi.org/10.1016/j.mssp.2019.104907
2018
“Band gap engineering of atomic layer deposited ZnxSn1-xO buffer for efficient Cu(In,Ga)Se2 solar cell”
R.E. Agbenyeke, S. Song, B.K. Park, G.H. Kim, J.H. Yun, T.M. Chung, C.G. Kim, J.H. Han
Progress in Photovoltaics: Research and Applications
https://doi.org/10.1002/pip.3012
“Post‐Annealing Effect on Resistive Switching Performance of a Ta/Mn2O3/Pt/Ti Stacked Device”
M.K. Yang, G.H. Kim*
Physica Status SolidiRapid Research Letters
https://doi.org/10.1002/pssr.201800031
“Optimized Method for Low‐Energy and Highly Reliable Multibit Operation in a HfO2‐Based Resistive Switching Device”
J.J. Ryu, B.K. Park, T.K. Chung, Y.K. Lee, G.H. Kim*
Advanced Electronic Materials
https://doi.org/10.1002/aelm.201800261
“Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis (N-ethoxy-2, 2-dimethyl propanamido) tin precursor”
H.Y. Kim, J.H. Nam, S.M. George, J.S. Park, B.K. Park, G.H. Kim, D.J. Jeon, T.M. Chung, J.H. Han
Ceramics International
https://doi.org/10.1016/j.ceramint.2018.09.263
2017
"Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device"
G.H. Kim, H. Ju, M.K. Yang, D.K. Lee, J.W. Choi, J.H. Jang, S. Lee, I.S. Cha, B.K. Park, J.H. Han, T.M. Chung, K.M. Kim, C.S. Hwang, Y.K. Lee,
Small
https://doi.org/10.1002/smll.201701781
"Basic ammonothermal growth of bulk GaN single crystal using sodium mineralizers"
J.B. Shim, G.H. Kim, Y.K. Lee,
Journal of Crystal Growth
https://doi.org/10.1016/j.jcrysgro.2017.08.027
"Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109"
K.J. Yoon, G.H. Kim, S. Yoo, W. Bae, J.H. Yoon, T.H. Park, D.E. Kwon, Y.J. Kwon, H.J. Kim, Y.M. Kim, C.S.Hwang,
Advanced Electronic Materials
https://doi.org/10.1002/aelm.201700152
"Improvement of thermoelectric properties of Bi2Te3 and Sb2Te3 films grown on graphene substrate"
C.W. Lee, G.H. Kim, J.W. Choi, K.S. An, J. Kim, H. Kim, Y.K. Lee,
Physica Status SolidiRapid Research Letters
https://doi.org/10.1002/pssr.201700029
"Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition"
C.W. Lee, G.H. Kim, S.G. Kang, M.A. Kang, K.S. An, H. Kim, Y.K. Lee,
Physica Status SolidiRapid Research Letters
https://doi.org/10.1002/pssr.201600369
2015
"Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film"
M.K. Yang, H. Ju, G.H. Kim, J.K. Lee, H.C. Ryu,
Scientific Reports
https://doi.org/10.1038/srep14053
"The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film"
M.K. Yang, G.H. Kim, H. Ju, J.K. Lee, H.C. Ryu,
Applied Physics Letters
https://doi.org/10.1063/1.4928249
"An analysis of “non-lattice” oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film"
M.K. Yang, G.H. Kim, H. Ju, J.K. Lee, H.C. Ryu,
Applied Physics Letters
https://doi.org/10.1063/1.4907704
2014
"A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View"
J.Y. Seok, S.J. Song, J.H. Yoon, K.J. Yoon, T.H. Park, D.E. Kwon, H. Lim, G.H. Kim, D.S. Jeong, C.S. Hwang,
Advanced Functional Materials
https://doi.org/10.1002/adfm.201303520
2013
"Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM"
S.J. Song, J.Y. Seok, J.H. Yoon, K.M. Kim, G.H. Kim, M.H. Lee, C.S. Hwang,
Scientific Reports
https://doi.org/10.1038/srep03443
"Electrode Engineering for Improving Resistance Switching of Sb2O5 Films"
Y. Ahn, Y.J. Choi, J.W. Park, J.H. Lee, G.H. Kim, Y.S. Kim, J. Heo, H.J. Kim, C.S. Hwang,
Applied Physics Express
https://doi.org/10.7567/APEX.6.091102
"Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt"
K.J. Yoon, S.J. Song, J.Y. Seok, J.H. Yoon, G.H. Kim, J.H. Lee, C.S. Hwang, Nanotechnology
https://doi.org/10.1088/0957-4484/24/14/145201
"Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots"
J.H. Yoon, J.H. Han, J.S. Jung, W. Jeon, G.H. Kim, S.J. Song, J.Y. Seok, K.J. Yoon, M.H. Lee, C.S. Hwang,
Advanced Materials
https://doi.org/10.1002/adma.201204572
2012
"Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide Sb2O5 films"
Y. Ahn, J.H. Lee, G.H. Kim, J.W. Park, J. Heo, S.W. Ryu, Y.S Kim, C.S. Hwang, H.J. Kim,
Journal of Applied Physics
https://doi.org/10.1063/1.4767918
"Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application"
S.J. Song, S.W. Lee, G.H. Kim, J.Y. Seok, K.J. Yoon, J.H. Yoon, C.S. Hwang, J. G, C.H. Ko,
Chemistry of Materials
https://doi.org/10.1021/cm302182s
"Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5"
Y. Ahn, S.W. Ryu, J.H. Lee, J.W. Park, G.H. Kim, Y.S. Kim, J. Heo, C.S. Hwang, H.J. Kim,
Journal of Applied Physics
https://doi.org/10.1063/1.4766415
"32x32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memomry"
G.H. Kim, J.H. Lee, Y. Ahn, W. Jeon, S.J. Song, J.Y. Seok, J.H. Yoon, K.J. Yoon, T.J. Park, C.S. Hwang
Advanced Functional Materials
https://doi.org/10.1002/adfm.201202170
"Optimization of Chemical Structure of Schottky-Type Selection Diode for Crossbar Resistive Memory"
G.H. Kim, J.H. Lee, W. Jeon, S.J. Song, J.Y. Seok, J.H. Yoon, K.J Yoon, T.J Park, C.S. Hwang,
ACS Applied Materials & Interfaces
https://doi.org/10.1021/am301293v
"Schottky diode with excellent performance for large integration density of crossbar resistive memory"
G.H. Kim, J.H. Lee, J.H. Han, S.J. Song, J.Y. Seok, J.H. Yoon, K.J. Yoon, M.H. Lee, T.J. Park, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.4722784
"Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell"
K.J. Yoon, M.H. Lee, G.H. Kim, S.J. Song, J.Y. Seok, S. Han, J.H. Yoon, K.M. Kim, C.S. Hwang,
Nanotechnology
https://doi.org/10.1088/0957-4484/23/18/185202
"Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory"
J.H. Lee, G.H. Kim, Y.B Ahn, J.W. Park, S.W Ryu, C.S Hwang, H.J Kim,
Applied Physics Letters
https://doi.org/10.1063/1.3696077
"Resistive Switching in TiO2 Thin Films Using the Semiconducting In-Ga-Zn-O Electrode"
J.Y. Seok, G.H. Kim, J.H. Kim U.K. Kim, Y.- J. Chung, S.J. Song, J.H. Yoon, K.J Yoon, M.H. Lee, K.M. Kim, C.S. Hwang,
IEEE Electron Device Letters
https://doi.org/10.1109/LED.2011.2182175
2011
“Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy”
M.H. Lee, K.M. Kim, S.J. Song, S.H. Rha, J.Y. Seok, J.S. Jung, G.H. Kim, J.H. Yoon, C.S. Hwang
Applied Physics AMATERIALS SCIENCE & PROCESSING
https://doi.org/10.1007/s00339-011-6266-7
“Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory”
K.M. Kim, S.J. Song, G.H. Kim, J.Y. Seok, M.H. Lee, J.H. Yoon, J. Park, C.S. Hwang
Advanced Functional Materials
https://doi.org/10.1002/adfm.201002282
“Local Epitaxial Growth of Ru Thin Films by Atomic Layer Deposition at Low Temperature”
S.K. Kim, S. Han, G.H. Kim, J.H. Jang, J.H. Han, C.S, Hwang
Journal of The Electrochemical Society
https://doi.org/10.1149/1.3596018
“SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory”
S.W. Ryu, H.K. Lyeo, J.H. Lee, Y.B. Ahn, G.H. Kim, C.H. Kim, S.G. Kim, S.H. Lee, K.Y. Kim, J.H. Kim
Nanotechnology
https://doi.org/10.1088/0957-4484/22/25/254005
“A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure”
K.M. Kim, B.J. Choi, M.H. Lee, G.H. Kim, S.J. Song, J.Y. Seok, J.H. Yoon, S. Han, C.S. Hwang
Nanotechnology
https://doi.org/10.1088/0957-4484/22/25/254010
“Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments”
G.H. Kim, J.H. Lee, J.Y. Seok, S.J. Song, J.H. Yoon, K.J. Yoon, M.H. Lee, K.M. Kim, H.D, Lee, S.W. Ryu, T.J. Park
Applied Physics Letters
https://doi.org/10.1063/1.3600784
“Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr,Ti)O3/Pt and paraelectric capacitors”
H.J. Lee, M.H. Park, G.H. Kim, J.Y. Seok, Y.J. Kim, C.S. Hwang, A.Q. Jiang
Journal of Applied Physics
https://doi.org/10.1063/1.3597816
“Tristate Memory Using Ferroelectric–Insulator–Semiconductor Heterojunctions for 50% Increased Data Storage”
M.H. Park, H.J. Lee, G.H. Kim, Y.J. Kim, J.H. Kim, J.H. Lee
Advanced Functional Materials
https://doi.org/10.1002/adfm.201101073
2010
“Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior”
J.H. Yoon, K.M. Kim, M.H. Lee, S.K. Kim, G.H. Kim, S.J. Song, J.Y. Seok, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3525801
“Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model”
K.M. Kim, M.H. Lee, G.H. Kim, S.J. Song, J.Y. Seok, J.H. Yoon, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3505354
“A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory”
G.H. Kim*, K.M. Kim, J.Y. Seok, H.J. Lee, D.Y. Cho, J.H. Han, C.S. Hwang,
Nanotechnology
https://doi.org/10.1088/0957-4484/21/38/385202
“Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory”
G.H. Kim, K.M. Kim, J.Y. Seok, M.H. Lee, S.J. Song, C.S. Hwang,
Journal of The Electrochemical Society
https://doi.org/10.1149/1.3478143
“Scanning probe based observation of bipolar resistive switching NiO films”
M.H. Lee, S.J. Song, K.M. Kim, G.H. Kim, J.Y. Seok, J.H. Yoon, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3479526
“Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures”
K.M. Kim, G.H. Kim, S.J. Song, J.Y. Seok, M.H. Lee, J.H. Yoon, C.S. Hwang,
Nanotechnology
https://doi.org/10.1088/0957-4484/21/30/305203
“Bias polarity dependent local electrical conduction in resistive switching TiO2 thin films”
Y.C. Shin, M.H. Lee, K.M. Kim, G.H. Kim, S.J. Song, J.Y. Seok, C.S. Hwang,
Physica Status SolidiRapid Research Letters
https://doi.org/10.1002/pssr.201004066
“Polarization reversal behavior in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt capacitors for different reversal directions”
H.J. Lee, G.H. Kim, M.H. Park, A.Q. Jiang, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3435484
“A Pt/TiO2/Ti SchottkyType selection diode for alleviating the sneak current in resistance switching memory arrays”
W.Y. Park, G.H. Kim, J.Y. Seok, K.M. Kim, S.J. Song, M.H. Lee, C.S. Hwang,
Nanotechnology
https://doi.org/10.1088/0957-4484/21/19/195201
“Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy”
M.H. Lee, K.M. Kim, G.H. Kim, J.Y. Seok, S.J. Song, J.H. Yoon, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3400222
“Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition”
S.K. Kim, J.H. Han, G.H. Kim, C.S. Hwang,
Chemistry of Materials
https://doi.org/10.1021/cm100057y
“Methods of Set Switching for Improving the Uniformity of Filament Formation in the TiO2 Thin Film”
K.M. Kim, S.J. Song, G.H. Kim, J.Y. Seok, M.H. Lee, J.S. Zhao, C.S. Hwang,
Electrochemical and Solid State Letters
https://doi.org/10.1149/1.3369469
“Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell”
S.J. Song, K.M. Kim, G.H. Kim, M.H. Lee, J.Y. Seok, R.J. Jung, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3355415
“Atomic structure of conducting nanofilaments in TiO2 resistive switching memory”
D.H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.S. Li, G.S. Park, B.R. Lee, S.W. Han, M.Y. Kim, C.S. Hwang,
Nature Nanotechnology
https://doi.org/10.1038/nnano.2009.456
2009
“An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O3 thin film capacitor using the switching transient current measurements”
G.H. Kim, H.J. Lee, A.Q. Jiang, M.H. Park, C.S. Hwang
Journal of Applied Physics
https://doi.org/10.1063/1.3078104
“The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films”
A.Q. Jiang, H.J. Lee, G.H. Kim, C.S. Hwang,
Advanced Materials
https://doi.org/10.1002/adma.200802924
“The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory”
S.W. Ryu, J.H. Lee, Y.B. Ahn, C.H. Kim, B.S. Yang, G.H. Kim, S.G. Kim, S.H. Lee, C.S. Hwang, H.J. Kim,
Applied Physics Letters
https://doi.org/10.1063/1.3232237
“Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films”
K.M. Kim, B.J. Choi, S.J. Song, G.H. Kim, C.S. Hwang
Journal of The Electrochemical Society
https://doi.org/10.1149/1.3240201
2008
“(In,Sn)2O3/TiO2/Pt Schottky-type diode switch for the TiO2 resistive switching memory array”
Y.C. Shin, J. Song, K.M. Kim, B.J. Choi, S. Choi, H.J. Lee, G.H. Kim, T. Eom, C.S. Hwang
Applied Physics Letters
https://doi.org/10.1063/1.2912531
2007
“Initial Growth Behavior of a Lead Oxide Thin Film on Ir Substrates by Atomic Layer Deposition”
H.J. Lee, G.H. Kim, K. Lee, C.S. Hwang
Electrochemical and Solid State Letters
https://doi.org/10.1149/1.2789286