Emerging Electronic Device
Research Group
YONSEI UNIVERSITY
Publication
2025
81 “Influence of oxidants on the characteristics of atomic layer deposited TiO2 thin films”
J.H. Hwang, G.Y. Lee, J.J. Ryu, J.W. Choi, T.M.Chung, Y.Y. Kim, S.H. Oh, S. Park, Y. Kim, G.H. Kim*, T. Eom
Applied Surface Science
https://doi.org/10.1016/j.apsusc.2025.163044
2024
80 “Structural Optimization of Chalcogenide Thin Films for Enhancing the Threshold Switching Performance”
J.J. Ryu, K. Jeon, H.K. Seo, T. Eom, M.K. Yang*, G.H. Kim*
ACS Applied Materials & Interfaces
https://doi.org/10.1021/acsami.4c15080
79 “Functional interface layer for a high-performance self-rectifying memristive device using hafnium-zirconia thin film”
S.Y. Jeong, J. Jung, H.K. Seo, J.S. Jeong, J.H. Lee, G.H. Kim*, M.K. Yang
Results in Engineering
https://doi.org/10.1016/j.rineng.2024.102906
78 “Al concentration-dependent electrical modulation of Al-doped ZnO thin f ilm using atomic layer deposition”
J.W. Choi, J.J. Ryu, W. Song, G.H. Kim*, T.M. Chung
Ceramics International
https://doi.org/10.1016/j.ceramint.2024.09.132
77 “Direct Growth of Bi2SeO5 Thin Films for High-k Dielectrics via Atomic Layer Deposition”
H. Park, J.H. Hwang, S.H. Oh, J.J. Ryu, K. Jeon, M. Kang, H.J. Chai, A. Ham, G.H. Kim*, K. Kang*, T. Eom*
ACS Nano
https://doi.org/10.1021/acsnano.4c05273
76 “Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators”
K. Jeon, J.J. Ryu, S. Im, H.K. Seo, T. Eom, H. Ju, M.K. Yang, D.S. Jeong, G.H. Kim*,
Nature Communications, Editor's pick, Featured article
https://doi.org/10.1038/s41467-023-44620-1
2023
75 "Ag-dispersive chalcogenide media for readily activated electronic memristor"
S.Y. Lee, J.J. Ryu, H.K. Seo, H. Sohn, G.H. Kim*, M.K. Yang
Applied Surface Science
https://doi.org/10.1016/j.apsusc.2023.158747
74 "Optimized chalcogenide medium for inherently activated resistive switching device"
J.J. Ryu, K. Jeon, T. Eom, M.K. Yang, H. Sohn, G.H. Kim*
Applied Surface Science
https://doi.org/10.1016/j.apsusc.2023.158444
73 "Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 Film"
D. Lee, G.H. Park, S.H. Kim, K.Yang, J. Lee, H. Choi, Y. Lee, J.J. Ryu, J.I. Lee, G.H. Kim*, M.H. Park,
IEEE ELECTRON DEVICE LETTERS
72 "Wake-up-mitigated giant ferroelectricity in Hf0.5Zr0.5O2 thin films through oxygen-providing, surface-oxidized W electrode"
K. Yang, G.Y. Kim, J.J. Ryu, D. Lee, J.Y. Park, S.H. Kim, G.H. Park, G.T. Yu, G.H. Kim*, S.Y. Choi, M.H. Park,
Materials Science in Semiconductor Processing
https://doi.org/10.1016/j.mssp.2023.107565
71 "Analogue Artificial Synaptic Performance of Self-rectifying Resistive Switching Device"
H.K. Seo, J.J Ryu, S.Y. Lee, K. Jeon, H. Sohn, G.H. Kim*, M.K. Yang,
Advanced Electronic Materials
https://doi.org/10.1002/aelm.202300165
2022
70 “Threshold switching in chalcogenide GeTe and GeTeS thin films prepared via plasma enhanced atomic layer deposition”
J.J Ryu, K. Jeon, H. Sohn, G.H. Kim*,
Journal of Materials Chemistry C
69 “Dot-product operation in crossbar array using a self-rectifying resistive device”
K. Jeon, J.J Ryu, D.S. Jeong, G.H. Kim*,
Advanced Materials Interfaces
https://doi.org/10.1002/admi.202200392
68 “Material and structural engineering of ovonic threshold switch for highly reliable performance”
H.K. Seo, J.J Ryu, S.Y. Lee, M. Park, S.G. Park, W. Song, G.H. Kim*, M.K. Yang,
Advanced Electronic Materials
https://doi.org/10.1002/aelm.202200161
67 “Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates”
K. Yang, E.B. Lee, D. Lee, J.Y. Park, S.H. Kim, G.H. Park, G.T. Yu, J.I. Lee, G.H. Kim*, M.H. Park,
Composites Part B
https://doi.org/10.1016/j.compositesb.2022.109824
2021
66 “Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device”
D. Lee, A.S. Sokolov, B. Ku, Y.R. Jeon, D.H. Kim, H.T. Kim, G.H. Kim*, C.H. Choi,
Applied Surface Science
https://doi.org/10.1016/j.apsusc.2021.149140
65 “Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity”
J.M. Hwang, S.M. Han, H. Yang, S. Yeo, S.H. Lee, C.W. Park, G.H. Kim, B.K. Park, Y. Byun, T. Eom, T.M. Chung,
Journal of Materials Chemistry C
64 “Self-rectifying resistive memory in passive crossbar arrays”
K. Jeon, J. Kim, J.J. Ryu, S. Yoo, C. Song, M.K. Yang, D.S. Jeong, G.H. Kim*,
Nature Communications
https://doi.org/10.1038/s41467-021-23180-2
63 “Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films”
D.H. Lee, G.T. Yu, J.Y. Park, S.H. Kim, K. Yang, G.H. Park, J.J. Ryu, J.I. Lee, G.H. Kim*, M.H. Park,
Acta Materialia
https://doi.org/10.1016/j.actamat.2021.117405
62 “Strategic allocation of two-dimensional van der Waals semiconductor as an oxygen reservoir for boosting resistive switching reliability”
S. Yoo, R.E. Agbenyeke, H. Choi, K. Jeon, J.J. Ryu, T. Eom, B.K. Park, T.M. Chung, D.S. Jeong, W. Song, G.H. Kim*
Applied Surface Science
https://doi.org/10.1016/j.apsusc.2021.151936
2020
61 “Ti-doped alumina based reliable resistive switching in sub-μA regime”
D.K. Lee, G.H. Kim, H. Sohn, M.K. Yang
Applied Physics Letters
https://doi.org/10.1063/5.0011310
60 “Highly Linear and Symmetric Weight Modification in HfO2‐Based Memristive Devices for High‐Precision Weight Entries”
J.J. Ryu, K. Jeon, G. Kim, M.K. Yang, C. Kim, D.S. Jeong, G.H. Kim*
Advanced Electronic Materials
https://doi.org/10.1002/aelm.202000434
59 “IR-QNN framework: An IR drop-aware offline training of quantized crossbar arrays”
M.E. Fouda, S. Lee, J. Lee, G.H. Kim, F. Kurdahi, A.M. Eltawi
IEEE Access
https://doi.org/10.1109/ACCESS.2020.3044652
2019
58 “Fully “Erase-free” Multi-Bit Operation in HfO2-Based Resistive Switching Device”
J.J. Ryu, K. Jeon, S. Yeo, G. Lee, C. Kim, G.H. Kim*
ACS Applied Materials & Interfaces
https://doi.org/10.1021/acsami.8b20035
57 “Role of an Interfacial Layer in Ta2O5-Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation”
D.K. Lee, G.H. Kim, H. Sohn, M.K. Yang
Physica Status SolidiRapid Research Letters
https://doi.org/10.1002/pssr.201900646
56 “Positive effects of a Schottky-type diode on unidirectional resistive switching devices”
D.K. Lee, G.H. Kim, H. Sohn, M.K. Yang
Applied Physics Letters
https://doi.org/10.1063/1.5133868
55 “Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir”
N. Mullani, I. Ali, T.D. Dongale, G.H. Kim, B.J. Choi, M.A. Basit, T.J. Park
Materials Science in Semiconductor Processing
https://doi.org/10.1016/j.mssp.2019.104907
2018
54 “Band gap engineering of atomic layer deposited ZnxSn1-xO buffer for efficient Cu(In,Ga)Se2 solar cell”
R.E. Agbenyeke, S. Song, B.K. Park, G.H. Kim, J.H. Yun, T.M. Chung, C.G. Kim, J.H. Han
Progress in Photovoltaics: Research and Applications
https://doi.org/10.1002/pip.3012
53 “Post‐Annealing Effect on Resistive Switching Performance of a Ta/Mn2O3/Pt/Ti Stacked Device”
M.K. Yang, G.H. Kim*
Physica Status SolidiRapid Research Letters
https://doi.org/10.1002/pssr.201800031
52 “Optimized Method for Low‐Energy and Highly Reliable Multibit Operation in a HfO2‐Based Resistive Switching Device”
J.J. Ryu, B.K. Park, T.K. Chung, Y.K. Lee, G.H. Kim*
Advanced Electronic Materials
https://doi.org/10.1002/aelm.201800261
51 “Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis (N-ethoxy-2, 2-dimethyl propanamido) tin precursor”
H.Y. Kim, J.H. Nam, S.M. George, J.S. Park, B.K. Park, G.H. Kim, D.J. Jeon, T.M. Chung, J.H. Han
Ceramics International
https://doi.org/10.1016/j.ceramint.2018.09.263
2017
50 "Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device"
G.H. Kim, H. Ju, M.K. Yang, D.K. Lee, J.W. Choi, J.H. Jang, S. Lee, I.S. Cha, B.K. Park, J.H. Han, T.M. Chung, K.M. Kim, C.S. Hwang, Y.K. Lee,
Small
https://doi.org/10.1002/smll.201701781
49 "Basic ammonothermal growth of bulk GaN single crystal using sodium mineralizers"
J.B. Shim, G.H. Kim, Y.K. Lee,
Journal of Crystal Growth
https://doi.org/10.1016/j.jcrysgro.2017.08.027
48 "Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109"
K.J. Yoon, G.H. Kim, S. Yoo, W. Bae, J.H. Yoon, T.H. Park, D.E. Kwon, Y.J. Kwon, H.J. Kim, Y.M. Kim, C.S.Hwang,
Advanced Electronic Materials
https://doi.org/10.1002/aelm.201700152
47 "Improvement of thermoelectric properties of Bi2Te3 and Sb2Te3 films grown on graphene substrate"
C.W. Lee, G.H. Kim, J.W. Choi, K.S. An, J. Kim, H. Kim, Y.K. Lee,
Physica Status SolidiRapid Research Letters
https://doi.org/10.1002/pssr.201700029
46 "Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition"
C.W. Lee, G.H. Kim, S.G. Kang, M.A. Kang, K.S. An, H. Kim, Y.K. Lee,
Physica Status SolidiRapid Research Letters
https://doi.org/10.1002/pssr.201600369
2015
45 "Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film"
M.K. Yang, H. Ju, G.H. Kim, J.K. Lee, H.C. Ryu,
Scientific Reports
https://doi.org/10.1038/srep14053
44 "The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film"
M.K. Yang, G.H. Kim, H. Ju, J.K. Lee, H.C. Ryu,
Applied Physics Letters
https://doi.org/10.1063/1.4928249
43 "An analysis of “non-lattice” oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film"
M.K. Yang, G.H. Kim, H. Ju, J.K. Lee, H.C. Ryu,
Applied Physics Letters
https://doi.org/10.1063/1.4907704
2014
42 "A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View"
J.Y. Seok, S.J. Song, J.H. Yoon, K.J. Yoon, T.H. Park, D.E. Kwon, H. Lim, G.H. Kim, D.S. Jeong, C.S. Hwang,
Advanced Functional Materials
https://doi.org/10.1002/adfm.201303520
2013
41 "Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM"
S.J. Song, J.Y. Seok, J.H. Yoon, K.M. Kim, G.H. Kim, M.H. Lee, C.S. Hwang,
Scientific Reports
https://doi.org/10.1038/srep03443
40 "Electrode Engineering for Improving Resistance Switching of Sb2O5 Films"
Y. Ahn, Y.J. Choi, J.W. Park, J.H. Lee, G.H. Kim, Y.S. Kim, J. Heo, H.J. Kim, C.S. Hwang,
Applied Physics Express
https://doi.org/10.7567/APEX.6.091102
39 "Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt"
K.J. Yoon, S.J. Song, J.Y. Seok, J.H. Yoon, G.H. Kim, J.H. Lee, C.S. Hwang, Nanotechnology
https://doi.org/10.1088/0957-4484/24/14/145201
38 "Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots"
J.H. Yoon, J.H. Han, J.S. Jung, W. Jeon, G.H. Kim, S.J. Song, J.Y. Seok, K.J. Yoon, M.H. Lee, C.S. Hwang,
Advanced Materials
https://doi.org/10.1002/adma.201204572
2012
37 "Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide Sb2O5 films"
Y. Ahn, J.H. Lee, G.H. Kim, J.W. Park, J. Heo, S.W. Ryu, Y.S Kim, C.S. Hwang, H.J. Kim,
Journal of Applied Physics
https://doi.org/10.1063/1.4767918
36 "Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application"
S.J. Song, S.W. Lee, G.H. Kim, J.Y. Seok, K.J. Yoon, J.H. Yoon, C.S. Hwang, J. G, C.H. Ko,
Chemistry of Materials
https://doi.org/10.1021/cm302182s
35 "Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5"
Y. Ahn, S.W. Ryu, J.H. Lee, J.W. Park, G.H. Kim, Y.S. Kim, J. Heo, C.S. Hwang, H.J. Kim,
Journal of Applied Physics
https://doi.org/10.1063/1.4766415
34 "32x32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memomry"
G.H. Kim, J.H. Lee, Y. Ahn, W. Jeon, S.J. Song, J.Y. Seok, J.H. Yoon, K.J. Yoon, T.J. Park, C.S. Hwang
Advanced Functional Materials
https://doi.org/10.1002/adfm.201202170
33 "Optimization of Chemical Structure of Schottky-Type Selection Diode for Crossbar Resistive Memory"
G.H. Kim, J.H. Lee, W. Jeon, S.J. Song, J.Y. Seok, J.H. Yoon, K.J Yoon, T.J Park, C.S. Hwang,
ACS Applied Materials & Interfaces
https://doi.org/10.1021/am301293v
32 "Schottky diode with excellent performance for large integration density of crossbar resistive memory"
G.H. Kim, J.H. Lee, J.H. Han, S.J. Song, J.Y. Seok, J.H. Yoon, K.J. Yoon, M.H. Lee, T.J. Park, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.4722784
31 "Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell"
K.J. Yoon, M.H. Lee, G.H. Kim, S.J. Song, J.Y. Seok, S. Han, J.H. Yoon, K.M. Kim, C.S. Hwang,
Nanotechnology
https://doi.org/10.1088/0957-4484/23/18/185202
30 "Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory"
J.H. Lee, G.H. Kim, Y.B Ahn, J.W. Park, S.W Ryu, C.S Hwang, H.J Kim,
Applied Physics Letters
https://doi.org/10.1063/1.3696077
29 "Resistive Switching in TiO2 Thin Films Using the Semiconducting In-Ga-Zn-O Electrode"
J.Y. Seok, G.H. Kim, J.H. Kim U.K. Kim, Y.- J. Chung, S.J. Song, J.H. Yoon, K.J Yoon, M.H. Lee, K.M. Kim, C.S. Hwang,
IEEE Electron Device Letters
https://doi.org/10.1109/LED.2011.2182175
2011
28 “Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy”
M.H. Lee, K.M. Kim, S.J. Song, S.H. Rha, J.Y. Seok, J.S. Jung, G.H. Kim, J.H. Yoon, C.S. Hwang
Applied Physics AMATERIALS SCIENCE & PROCESSING
https://doi.org/10.1007/s00339-011-6266-7
27 “Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory”
K.M. Kim, S.J. Song, G.H. Kim, J.Y. Seok, M.H. Lee, J.H. Yoon, J. Park, C.S. Hwang
Advanced Functional Materials
https://doi.org/10.1002/adfm.201002282
26 “Local Epitaxial Growth of Ru Thin Films by Atomic Layer Deposition at Low Temperature”
S.K. Kim, S. Han, G.H. Kim, J.H. Jang, J.H. Han, C.S, Hwang
Journal of The Electrochemical Society
https://doi.org/10.1149/1.3596018
25 “SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory”
S.W. Ryu, H.K. Lyeo, J.H. Lee, Y.B. Ahn, G.H. Kim, C.H. Kim, S.G. Kim, S.H. Lee, K.Y. Kim, J.H. Kim
Nanotechnology
https://doi.org/10.1088/0957-4484/22/25/254005
24 “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure”
K.M. Kim, B.J. Choi, M.H. Lee, G.H. Kim, S.J. Song, J.Y. Seok, J.H. Yoon, S. Han, C.S. Hwang
Nanotechnology
https://doi.org/10.1088/0957-4484/22/25/254010
23 “Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments”
G.H. Kim, J.H. Lee, J.Y. Seok, S.J. Song, J.H. Yoon, K.J. Yoon, M.H. Lee, K.M. Kim, H.D, Lee, S.W. Ryu, T.J. Park
Applied Physics Letters
https://doi.org/10.1063/1.3600784
22 “Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr,Ti)O3/Pt and paraelectric capacitors”
H.J. Lee, M.H. Park, G.H. Kim, J.Y. Seok, Y.J. Kim, C.S. Hwang, A.Q. Jiang
Journal of Applied Physics
https://doi.org/10.1063/1.3597816
21 “Tristate Memory Using Ferroelectric–Insulator–Semiconductor Heterojunctions for 50% Increased Data Storage”
M.H. Park, H.J. Lee, G.H. Kim, Y.J. Kim, J.H. Kim, J.H. Lee
Advanced Functional Materials
https://doi.org/10.1002/adfm.201101073
2010
20 “Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior”
J.H. Yoon, K.M. Kim, M.H. Lee, S.K. Kim, G.H. Kim, S.J. Song, J.Y. Seok, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3525801
19 “Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model”
K.M. Kim, M.H. Lee, G.H. Kim, S.J. Song, J.Y. Seok, J.H. Yoon, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3505354
18 “A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory”
G.H. Kim*, K.M. Kim, J.Y. Seok, H.J. Lee, D.Y. Cho, J.H. Han, C.S. Hwang,
Nanotechnology
https://doi.org/10.1088/0957-4484/21/38/385202
17 “Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory”
G.H. Kim, K.M. Kim, J.Y. Seok, M.H. Lee, S.J. Song, C.S. Hwang,
Journal of The Electrochemical Society
https://doi.org/10.1149/1.3478143
16 “Scanning probe based observation of bipolar resistive switching NiO films”
M.H. Lee, S.J. Song, K.M. Kim, G.H. Kim, J.Y. Seok, J.H. Yoon, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3479526
15 “Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures”
K.M. Kim, G.H. Kim, S.J. Song, J.Y. Seok, M.H. Lee, J.H. Yoon, C.S. Hwang,
Nanotechnology
https://doi.org/10.1088/0957-4484/21/30/305203
14 “Bias polarity dependent local electrical conduction in resistive switching TiO2 thin films”
Y.C. Shin, M.H. Lee, K.M. Kim, G.H. Kim, S.J. Song, J.Y. Seok, C.S. Hwang,
Physica Status SolidiRapid Research Letters
https://doi.org/10.1002/pssr.201004066
13 “Polarization reversal behavior in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt capacitors for different reversal directions”
H.J. Lee, G.H. Kim, M.H. Park, A.Q. Jiang, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3435484
12 “A Pt/TiO2/Ti SchottkyType selection diode for alleviating the sneak current in resistance switching memory arrays”
W.Y. Park, G.H. Kim, J.Y. Seok, K.M. Kim, S.J. Song, M.H. Lee, C.S. Hwang,
Nanotechnology
https://doi.org/10.1088/0957-4484/21/19/195201
11 “Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy”
M.H. Lee, K.M. Kim, G.H. Kim, J.Y. Seok, S.J. Song, J.H. Yoon, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3400222
10 “Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition”
S.K. Kim, J.H. Han, G.H. Kim, C.S. Hwang,
Chemistry of Materials
https://doi.org/10.1021/cm100057y
9 “Methods of Set Switching for Improving the Uniformity of Filament Formation in the TiO2 Thin Film”
K.M. Kim, S.J. Song, G.H. Kim, J.Y. Seok, M.H. Lee, J.S. Zhao, C.S. Hwang,
Electrochemical and Solid State Letters
https://doi.org/10.1149/1.3369469
8 “Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell”
S.J. Song, K.M. Kim, G.H. Kim, M.H. Lee, J.Y. Seok, R.J. Jung, C.S. Hwang,
Applied Physics Letters
https://doi.org/10.1063/1.3355415
7 “Atomic structure of conducting nanofilaments in TiO2 resistive switching memory”
D.H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.S. Li, G.S. Park, B.R. Lee, S.W. Han, M.Y. Kim, C.S. Hwang,
Nature Nanotechnology
https://doi.org/10.1038/nnano.2009.456
2009
6 “An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O3 thin film capacitor using the switching transient current measurements”
G.H. Kim, H.J. Lee, A.Q. Jiang, M.H. Park, C.S. Hwang
Journal of Applied Physics
https://doi.org/10.1063/1.3078104
5 “The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films”
A.Q. Jiang, H.J. Lee, G.H. Kim, C.S. Hwang,
Advanced Materials
https://doi.org/10.1002/adma.200802924
4 “The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory”
S.W. Ryu, J.H. Lee, Y.B. Ahn, C.H. Kim, B.S. Yang, G.H. Kim, S.G. Kim, S.H. Lee, C.S. Hwang, H.J. Kim,
Applied Physics Letters
https://doi.org/10.1063/1.3232237
3 “Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films”
K.M. Kim, B.J. Choi, S.J. Song, G.H. Kim, C.S. Hwang
Journal of The Electrochemical Society
https://doi.org/10.1149/1.3240201
2008
2 “(In,Sn)2O3/TiO2/Pt Schottky-type diode switch for the TiO2 resistive switching memory array”
Y.C. Shin, J. Song, K.M. Kim, B.J. Choi, S. Choi, H.J. Lee, G.H. Kim, T. Eom, C.S. Hwang
Applied Physics Letters
https://doi.org/10.1063/1.2912531
2007
1 “Initial Growth Behavior of a Lead Oxide Thin Film on Ir Substrates by Atomic Layer Deposition”
H.J. Lee, G.H. Kim, K. Lee, C.S. Hwang
Electrochemical and Solid State Letters
https://doi.org/10.1149/1.2789286